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We electron-dope single crystal samples of SrTiO_3 by exposing them to Ar^+irradiation and observe carrier mobility similar in its magnitude andtemperature dependence to the carrier mobility in other electron-doped SrTiO3systems. We find that some transport properties are time-dependent. Inparticular, the sheet resistance increases with time at a temperature-dependentrate, suggesting an activation barrier on the order of 1 eV. We attribute therelaxation effects to diffusion of oxygen vacancies - a process with energybarrier similar to the observed activation energy.

Relaxation of transport properties in electron doped SrTiO3