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We establish a correlation between the internal stress in InN epilayers andtheir optical properties such as the measured absorption band edge andphotoluminescence emission wavelength. By a careful evaluation of the latticeconstants of InN epilayers grown on c-plane sapphire substrates under variousconditions by metalorganic vapor phase epitaxy we find that the films are underprimarily hydrostatic stress. This results in a shift in the band edge tohigher energy. The effect is significant, and may be responsible for some ofthe variations in InN bandgap reported in the literature.

The role of hydrostatic stress in determining the bandgap of InN epilayers