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We employ a cryogenic High Electron Mobility Transistor (HEMT) amplifier toincrease the bandwidth of a charge detection setup with a quantum point contact(QPC) charge sensor. The HEMT is operating at 1K and the circuit has abandwidth of 1 MHz. The noise contribution of the HEMT at high frequencies isonly a few times higher than that of the QPC shot noise. We use this setup tomonitor single-electron tunneling to and from an adjacent quantum dot and wemeasure fluctuations in the dot occupation as short as 400 nanoseconds, 20times faster than in previous work.

A cryogenic amplifier for fast real-time detection of single-electron tunneling