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We have studied the annealing effect in transport properties of Hightemperature Josephson Junctions (HTc JJ) made by ion irradiation. Lowtemperature annealing (80 degrees Celsius) increases the JJ transitiontemperature (TJ) and the Ic.Rn product, where Ic is the critical current and Rnthe normal resistance. We found that the spread in JJ characteristics can belowered by sufficient long annealing times. Using random walk numericalsimulations, we showed that the characteristic annealing time and the evolutionof the spread in JJ characteristics can be explained by a vacancy-interstitialannihilation process rather than by an oxygen diffusion one.

Improving HTc Josephson Junctions (HTc JJ) by annealing: the role of vacancy-interstitial annihilation