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The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C. While the welldefined nearest neighbor ordering indicating crystallinity of the MgO barrierdoes not change by the annealing, a small amount of interfacial Fe-O at thelower Co-Fe-B / MgO interface is found in the as grown samples, which iscompletely reduced after annealing at 275C. This is accompanied by asimultaneous increase of the Fe magnetic moment and the tunnelmagnetoresistance. However, the TMR of the MgO based junctions increasesfurther for higher annealing temperature which can not be caused by Fe-Oreduction. The occurrence of an x-ray absorption near-edge structure above theFe and Co L-edges after annealing at 350C indicates the recrystallization ofthe Co-Fe-B electrode. This is prerequisite for coherent tunneling and has beensuggested to be responsible for the further increase of the TMR above 275C.Simultaneously, the B concentration in the Co-Fe-B decreases with increasingannealing temperature, at least some of the B diffuses towards or into the MgObarrier and forms a B2O3 oxide

journal of applied physics

Influence of chemical and magnetic interface properties of Co-Fe-B/MgO/Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance