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A GaInNAs∕AlAs∕AlGaAs double-barrier quantum well infrared photodetector was grown by molecular beam epitaxy and fabricated by standard device processes. The growth structure of the as-grown sample was verified by x-ray diffraction measurement. The photoluminescence emission peak, which is related to the interband transition in the GaInNAs well, was observed at ∼1.2eV. After annealing at 650°C, a large blueshift of 40meV was observed. The photocurrent peak at 1.24μm is associated with the intersubband transitions in the conduction band of the GaInNAs quantum well. The ten-band k∙p calculations agree with the above observations.

GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24μm