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The authors have investigated the photoconductivity (PC) phenomena of SiOx thin films during annealing, which eventually lead to the formation of luminescent Si nanostructures. It has been found that there are three characteristic annealing stages in the variation of the PC spectral response depending on the microscopic structural transformations of the annealed samples, namely, the elimination of defective midgap states of the as-deposited films, the evolution of conducting Si nanostructures, and the subsequent formation of isolated luminescent Si nanograins.

Evolution process of luminescent Si nanostructures in annealed SiOx thin films probed by photoconductivity measurements