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We show that a Spin Field Effect Transistor, realized with a semiconductorquantum wire channel sandwiched between half-metallic ferromagnetic contacts,can have Fano resonances in the transmission spectrum. These resonances appearbecause the ferromagnets are half-metallic, so that the Fermi level can beplaced above the majority but below the minority spin band. In that case, themajority spins will be propagating, but the minority spins will be evanescent.At low temperatures, the Fano resonances can be exploited to implement adigital binary switch that can be turned on or off with a very small gatevoltage swing of few tens of microvolts, leading to extremely small dynamicpower dissipation during switching. An array of 500,000 x 500,000 suchtransistors can detect ultrasmall changes in a magnetic field with asensitivity of 1 femto-Tesla/sqrt{Hz}, if each transistor is biased near a Fanoresonance.

A Digital Switch and Femto-Tesla Magnetic Field Sensor Based on Fano Resonance in a Spin Field Effect Transistor