English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Using three-dimensional k.p calculation including strain andpiezoelectricity, we showed that the size of the quantum dot (QD) in the growthdirection determines the influence of the (In,Ga)As capping layer on theoptical properties of [11k] grown InAs QDs, where k=1,2,3. For flat dots,increase of In concentration in the capping layer leads to a decrease of thetransition energy, as is the case of [001] grown QDs, whereas for large dots anincrease of the In concentration in the capping layer is followed by anincrease of the transition energy up to a critical concentration of In, afterwhich the optical transition energy starts to decrease.

Optical properties of (In,Ga)As capped InAs quantum dots grown on [11k] substrates