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The authors have studied the use of antimony for the optimization of the InAs/GaAs(001) self-assembled quantum dot (QD) luminescence characteristics in the 1.3  µm spectral region. The best results have been obtained by capping InAs QDs with 2 ML of GaSb grown on top of a 3 ML GaAs barrier separating the InAs and the GaSb layers. This results in an order of magnitude enhancement of the room temperature luminescence intensity at 1.3  µm emission wavelength.Support by CAM (Project Nos. 200560M089, S-505/ENE-310, S-505/ESP/000200), by MEC (Project Nos. TEC-2005-05781-C03-01, NAN2004-09109-C04-01, Consolider-Ingenio 2010 CSD2006-00019, RyC2003) and by the European Commission through the SANDIE Network of Excellence (NMP4-CT-2004-500101)is acknowledged. This work would have not been possible without the expert help of F. Briones and D. Fuster.Peer reviewe

Enhancement of the room temperature luminescence of InAs quantum dots by GaSb capping