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The control of the emission energy from self-assembled InAs quantum dots has been demonstratedby using indium flush. The low-temperature indium-flush method was found to control the emissionenergy preserving the high structural uniformity attributed to the slow dot growth. In the standardindium-flush method, where the substrate temperature was raised up from the dot-growthtemperature, blueshift larger than the shift by the low-temperature indium flush was observed andwas explained reasonably by the enhanced In/Ga-interdiffusion. Also, the effect of AlGaAs cappinglayer before the indium-flush step was studied

journal of applied physics

Effect of indium-flush method on the control of photoluminescence energy of highly uniform self-assembled InAs quantum dots by slow molecular beam epitaxy growth