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We have performed theoretical and experimental studies of field emission fromnanostructured semiconductor cathodes. Resonant tunneling throughelectric-field-induced interface bound states is found to strongly affect thefield-emission characteristics. Our analytical theory predicts power-law andLorentzian-shaped current-voltage curves for resonant-tunneling field emissionfrom three-dimensional substrates and two-dimensional accumulation layers,respectively. These predicted line shapes are observed in field emissioncharacteristics from self-assembled silicon nanostructures. A simple modeldescribes formation of an accumulation layer and of the resonant level in thesesystems.

Universal characteristics of resonant-tunneling field emission from nanostructured surfaces