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The effect of the interface between Al2O3 and HfO2 sublayers on the dielectric constant was investigated in HfO2∕Al2O3 nanolaminate films deposited using plasma-enhanced atomic layer deposition. After annealing at 700°C, the dielectric constants of the nanolaminate films with a sublayer thickness of 40A or greater were the same as the calculated values for a series of capacitors consisting of amorphous Al2O3 and monoclinic or tetragonal HfO2. As the sublayer thickness was reduced to 10A, the dielectric constant increased up to 17.7 because a thin Hf–O–Al mixture layer, of which the number increases drastically in the nanolaminate films with thin sublayers, is formed at the interface.The effect of the interface between Al2O3 and HfO2 sublayers on the dielectric constant was investigated in HfO2∕Al2O3 nanolaminate films deposited using plasma-enhanced atomic layer deposition. After annealing at 700°C, the dielectric constants of the nanolaminate films with a sublayer thickness of 40A or greater were the same as the calculated values for a series of capacitors consisting of amorphous Al2O3 and monoclinic or tetragonal HfO2. As the sublayer thickness was reduced to 10A, the dielectric constant increased up to 17.7 because a thin Hf–O–Al mixture layer, of which the number increases drastically in the nanolaminate films with thin sublayers, is formed at the interface.

Interface effect on dielectric constant of HfO2∕Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition