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A systematic Mn L-edge x-ray absorption is carried out on carefully prepared Ga0.946Mn0.054As ferromagnetic semiconductors with varying As-2/Ga flux ratio. It is found that the L-3 peak of the absorption spectroscopy is enhanced after low temperature (LT) annealing. Furthermore it is shown that a more localized electronic structure nearly like the d(5) high-spin state is obtained. It can be attributed to breaking the Mn-S-Mn-I pairs during the annealing process. Furthermore the authors present a direct evidence for a slightly increase of the Mn substitutional concentration due to LT annealing. (c) 2007 American Institute of Physics

Study of the transport properties of annealed (Ga,Mn)As by x-ray absorption spectroscopy