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In scanning gate microscopy, where the tip of a scanning force microscope isused as a movable gate to study electronic transport in nanostructures, theshape and magnitude of the tip-induced potential are important for theresolution and interpretation of the measurements. Contaminations picked upduring topography scans may significantly alter this potential. We present anin situ high-field treatment of the tip that improves the tip-inducedpotential. A quantum dot was used to measure the tip-induced potential.Comment: 3 pages, 1 figure, minor changes to fit published versio

In situ treatment of a scanning gate microscopy tip