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A multipath-switching device using a multiterminal nanowire junction with size-controlled dual gates is proposed and demonstrated experimentally. The device switches a number of output terminals according to multiple-valued input voltages for electrons entering from a root terminal. The switching function is implemented by dual gating on multiple nanowires with different threshold voltages Vth. Systematic Vth shift is made by changing gate lengths in nanometer scale. A triple-path-switching device is fabricated using AlGaAs/GaAs etched nanowires and nanometer-scale Schottky wrap gates. Its correct operation is confirmed at room temperature. Obtained results are explained by a simple analytical model

Multipath-switching device utilizing a GaAs-based multiterminal nanowire junction with size-controlled dual Schottky wrap gates