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High Tc Josephson nanoJunctions (HTc JnJ) made by ion irradiation haveremarkable properties for technological applications. However, the spread intheir electrical characteristics increases with the ion dose. We present asimple model to explain the JnJ inhomogeneities, which accounts quantitativelyfor experimental data. The spread in the slit's width of the irradiation maskis the limiting factor.Monte Carlo simulations have been performed usingdifferent irradiation conditions to study their influence on the spread of theJnJ charcateristics. A "universal" behavior has been evidenced, which allows topropose new strategies to optimize JnJ reproducibility.

Study and optimization of ion-irradiated High-Tc Josephson nanoJunctions by Monte Carlo simulations