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We present results of numerical calculations of domain-wall resistance in theferromagnetic semiconductor (Ga,Mn)As. We employ Landauer-Buttiker formalismand the tight binding method. Taking into account the full valence bandstructure we predict the magnitude of the domain-wall resistance withoutdisorder and compare it to experimental values. Next we add disorder to themodel and study numerically both small and large disorder regime.Comment: Comments accepted to: Proceedings of the 28th International  Conference on the Physics of Semiconductors (AIP CP

Theory of Spin Transport Across Domain-Walls in (Ga,Mn)As