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The epitaxial growth conditions for silicon on germanium substrates wereinvestigated as a function of growth temperature and monolayer coverage. Islandformation was observed for the hole studied temperature range, although strongalloying with the substrate occurred for the highest temperatures. Carbonpre-deposition offers suitable nucleation centers for the Si island andreduction of alloying. pre-structured Ge substrates were prepared to enhanceislanding and to achieve ordering.Comment: presented 26.July 2006 at ICPS 2006 Vienn

Self - Organized Si Dots On Ge Substrates