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Magnetic tunnel junctions with the layer sequenceCo$_2$Cr$_{0.6}$Fe$_{0.4}$Al/MgO/CoFe were fabricated by magnetron sputteringat room temperature (RT). The samples exhibit a large inverse tunnelingmagnetoresistance (TMR) effect of up to -66% at RT. The largest value of -84%at 20 K reflects a rather weak influence of temperature. The dependence on thevoltage drop shows an unusual behavior with two almost symmetric peaks at$\pm600$ mV with large inverse TMR ratios and small positive values around zerobias

Large inverse tunneling magnetoresistance in Co2Cr0.6Fe0.4Al∕MgO∕Co80Fe20 magnetic tunnel junctions