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Pb0.99Nb0.02(Zr0.84Sn0.12Ti0.04)0.98O3 thin films demonstrate a double hysteresis loop characteristic of antiferroelectric behavior with film thickness at above 150  nm, but only one branch of the loop is present in films that are 90  nm thick. The relaxation time of domain backswitching from ferroelectric into antiferroelectric is multistaged in a range of 100  ns–100  ms, but it is less than 100  ns in the films without Sn and Nb dopants. Electrical modeling of the films composed of elementary regions with inhomogeneities of dielectric constant, conductivity, and polarization embodies the essence of charge injection for the compensation of local backswitching field of domains

applied physics letters

Asymmetry of domain forward switching and multilevel relaxation times of domain backswitching in antiferroelectric Pb0.99Nb0.02(Zr0.84Sn0.12Ti0.04)0.98O3 thin films