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We complement our study on the doping and disorder in Co$_2$MnZ compounds [I.Galanakis \textit{et al.}, Appl. Phys. Lett. \textbf{89}, 042502 (2006) and K.\"Ozdo\~gan \textit{et al.}, Phys. Rev. B \textbf{74}, (2006)] to cover alsothe quaterarny Co$_2$[Y$_{1-x}$Y$^*_x$]Z compounds with the lower-valenttransition metals Y,Y$^*$ being Cr, Mn or Fe and the sp atom Z being one of Al,Ga, Si, Ge, Sn. This study gives a global overview of the magnetic andelectronic properties of these compounds since we vary both Y and Z elements.Our results suggest that for realistic applications the most appropriatecompounds are the ones belonging to the families Co$_2$[Mn$_{1-x}$Cr$_x$]Z with$x>0.5$ irrespectively of the nature of the $sp$ atoms since they combine highvalues of majority DOS at the Fermi level due to the presence of Cr, andhalf-metallicity with large band-gaps. On the other hand the presence of Felowers considerably the majority density of states at the Fermi level and whencombined with an element belonging to the Si-column, it even can destroyhalf-metallicity

journal of applied physics

Influence of mixing the low-valent transition metal atoms (Y, Y*=Cr, Mn, Fe) on the properties of the quaternary Co2[Y1−xYx*]Z (Z=Al, Ga, Si, Ge, or Sn) Heusler compounds