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The search for semiconductors with high thermoelectric figure of merit hasbeen greatly aided by theoretical modeling of electron and phonon transport,both in bulk materials and in nanocomposites. Recent experiments have studiedthermoelectric transport in ``strongly correlated'' materials derived by dopingMott insulators, whose insulating behavior without doping results fromelectron-electron repulsion, rather than from band structure as insemiconductors. Here a unified theory of electrical and thermal transport inthe atomic and ``Heikes'' limit is applied to understand recent transportexperiments on sodium cobaltate and other doped Mott insulators at roomtemperature and above. For optimal electron filling, a broad class ofnarrow-bandwidth correlated materials are shown to have power factors (theelectronic portion of the thermoelectric figure of merit) as high at and aboveroom temperature as in the best semiconductors.Comment: 4 pages, 4 figure

Doping dependence of thermopower and thermoelectricity in strongly correlated materials