English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

Thin PbTe films (thickness 500 - 600 angstrom), deposited on SrTiO3, havebeen investigated by electric field effect (EFE). The high resistivity of suchthin films warrants a high sensitivity of the EFE method. The SrTiO3 substrateserves as the dielectric layer in the Gate-Dielectric-PbTe structure. Due tothe large dielectric constant of SrTiO3, particularly at low temperatures, theelectric displacement D in the film reaches the high value of about 10^8 V/cm,and the EFE introduced charge into the PbTe film amounts to ~ 8 microC/cm2. Thehigh D permits to measure the EFE resistance and Hall constant over a wideregion of D, revealing the characteristic features of their D-dependence. Anappropriate theoretical model has been formulated, showing that, for suchfilms, one can measure the dependence of the Fermi level on D. In fact, wedemonstrate that shifting the Fermi level across the gap by varying D, thedensity-of-states of the in-gape states can be mapped out. Our results show,that the PbTe layers studied, possess a mobility gap exceeding the gap of bulkPbTe.Comment: 27 pages, 12 figure

Electric field effect analysis of thin PbTe films on high-ε SrTiO3 substrate