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Magnetic properties of single crystalline Ga1−xMnxS (x=0.09) have been measured near the spin-glass transition. No other III-VI DMS is currently known to exhibit a spin-glass transition for comparison with Ga1−xMnxS. Ga1−xMnxS (Tc=11.2K) shows unexpected similarity to II-VI DMS Zn1−xMnxTe (Tc=20.8K). For both systems, the quantity χnl=−Mnl∕H (where Mnl=Mtotal−Mlinear) diverges as the temperature approaches the spin-glass transition temperature Tc from above. It also increases with applied field at temperatures just above Tc for both systems. The spin-glass transitions in both Ga1−xMnxS and Zn1−xMnxTe follow the same universal scaling function with the same critical exponent values (γ=4.0±1.0 and β=0.8±0.2). The temperature of Ga1−xMnxS’s low-field spin-glass transition cusp was found to occur at 10.9K. As expected, this is slightly lower than the true spin-glass transition temperature Tc=11.2±0.2K obtained from the scaling analysis. The asymptotic, zero-field limit of the spin-glass transition cusp was fo...

Nonlinear magnetization behavior near the spin-glass transition in the layered III-VI diluted magnetic semiconductor Ga1−xMnxS