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Porous silicon single layers are formed by anodization of silicon in a hydrofluoric acid solution at different current densities. An accurate estimation of the etch rates and refractive indices is performed. The refractive index-depth profile of a porous silicon rugate filter (PSRF) prepared by sinusoidally modulating the current density during etch is investigated. The produced PSRF is found to have a periodic pseudo-sinusoidal variation of refractive index with depth. The sinusoidal current density waveform that was employed generates a nonideal refractive index-depth profile with an asymmetric period. It is found that this deformed refractive index profile affects the quality of the characteristic resonant peak of the rugate filter. A simple modification of the current density waveform can be implemented, which allows one to achieve a true sinusoidal refractive index-depth profile characteristic of a rugate filter. The modified current density waveform allows the generation of a PSRF with a low index c...

Electrochemical preparation of a rugate filter in silicon and its deviation from the ideal structure