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Cu-implanted SiO2 films on Si(100) have been studied and compared to unimplanted SiO2 on\udSi(100) using x-ray methods, transmission electron microscopy, Rutherford backscattering, and\udBrillouin spectroscopy. The x-ray results indicate the preferred orientation of Cu {111} planes\udparallel to the Si substrate surface without any directional orientation for Cu-implanted\udSiO2/Si(100) and for Cu-implanted and annealed SiO2/Si(100). In the latter case, transmission\udelectron microscopy reveals the presence of spherical nanocrystallites with an average size of\ud~2.5 nm. Rutherford backscattering shows that these crystallites (and the Cu in the as-implanted\udfilm) are largely confined to depths of 0.4−1.2 µm below the film surface. Brillouin spectra contain\udpeaks due to surface, film-guided and bulk acoustic modes. Surface (longitudinal) acoustic wave\udvelocities for the implanted films were ~7% lower (~2% higher) than for unimplanted\udSiO2/Si(100). Elastic constants were estimated from the acoustic wave velocities and film densities.\udC11 (C44) for the implanted films was ~10% higher (lower) than that for the unimplanted film. The\uddifferences in acoustic velocities and elastic moduli are ascribed to implantation-induced\udcompaction and/or the presence of Cu in the SiO2 film

Structural and elastic characterization of Cu-implanted SiO2 films on Si(100) substrates