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We have fabricated a lateral double barrier magnetic tunnel junction (MTJ)which consists of a single self-assembled InAs quantum dot (QD) withferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance(TMR) effect, which is evidence for spin transport through a singlesemiconductor QD. The TMR ratio and the curve shapes are varied by changing thegate voltage.Comment: 4 pages, 3 figure

Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads