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The n-type InGaAs∕AlxGa1−xAs quantum well infrared photodetector (QWIP) with asymmetric graded barriers for broadband detection has been investigated theoretically based on the eight-band k∙p model. It is found that the intersubband transitions from the ground state to all bound and continuum excited states contribute to the overall absorption and the bound-to-continuum (B-to-C) transitions dominate. The superposition of the bound-to-bound and B-to-C transitions results in a broad detection bandwidth, and both the detected wavelength and bandwidth can be tuned by the applied voltage. The analysis method is also applicable to the GaAs∕InxGa1−xAs∕InyGa1−yAs QWIP with step quantum wells. The calculated results are consistent with the reported experimental observations.

Theoretical study of quantum well infrared photodetectors with asymmetric well and barrier structures for broadband photodetection