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The tip artifact in atomic force microscopy (AFM) observations of InAsislands was evaluated quantitatively. The islands were grown in theStranski-Krastanow mode of molecular beam epitaxy. The width and height of theislands were determined using transmission electron microscopy (TEM) and AFM.The average $[\bar{1}10]$ in-plane width and height determined using TEMexcluding native oxide were 22 and 7 nm, respectively; those determined usingAFM including the oxide were 35 and 8 nm, respectively. The difference in widthwas due to the oxide and the tip artifact. The sizes including the oxide werededuced from TEM observations to be a width of 27 nm and a height of 6 nm withcorrection for the thickness of the oxide. The residual difference of 8 nmbetween the width determined using AFM and that determined using TEM includingthe oxide was ascribed to the tip artifact. The results enable us to determinethe actual size of the islands from their AFM images.Comment: 5 pages, 4 figures, 1 table, (C) 2007 American Institute of Physic

Tip artifact in atomic force microscopy observations of InAs quantum dots grown in Stranski–Krastanow mode