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We demonstrate fully electrical detection of spin injection in InAs quantumwells. A spin polarized current is injected from a NiFe thin film to atwo-dimensional electron gas (2DEG) made of InAs based epitaxial multi-layers.Injected spins accumulate and diffuse out in the 2DEG, and the spins areelectrically detected by a neighboring NiFe electrode. The observed spindiffusion length is 1.8 um at 20 K. The injected spin polarization across theNiFe/InAs interface is 1.9% at 20 K and remains at 1.4% even at roomtemperature. Our experimental results will contribute significantly to therealization of a practical spin field effect transistor

Electrical spin injection and detection in an InAs quantum well