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We used x-ray photoemission spectroscopy to investigate the electronicstructure of the Mott insulator LaVO3 embedded in LaAlO3. By limiting the upperlayer of LaAlO3 to 3 unit cells, the underlying LaVO3 could be probed. The V 2pcore-level spectra had both V3+ and V4+ components, and above 2 unit cell thickLaVO3, the structures exhibited spectra similar to bulk samples. The atomicallyflat surfaces enabled study of the emission angle dependence, which indicatesthe V4+ is localized to the topmost layer. These results demonstrate thepotential for probing interface electronic structure in oxide ultrathin filmsby surface spectroscopy.Comment: 11 pages, 4 figure

Electronic structure of the Mott insulator LaVO3 in a quantum well geometry