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We report on the functionalization of multiferroic BiFeO3 epitaxial films forspintronics. A first example is provided by the use of ultrathin layers ofBiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 andCo electrodes. In such structures, a positive tunnel magnetoresistance up to30% is obtained at low temperature. A second example is the exploitation of theantiferromagnetic spin structure of a BiFeO3 film to induce a sizeable (~60 Oe)exchange bias on a ferromagnetic film of CoFeB, at room temperature.Remarkably, the exchange bias effect is robust upon magnetic field cycling,with no indications of training.Comment: 15 pages, 4 figure

Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films