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We study the resistively detected nuclear magnetic resonance (NMR) in anAlGaAs/GaAs quantum Hall device with a side gate. The strength of the hyperfineinteraction between electron and nuclear spins is modulated by tuning aposition of the two-dimensional electron systems with respect to the polarizednuclear spins using the side-gate voltages. The NMR frequency is systematicallycontrolled by the gate-tuned technique in a semiconductor device.Comment: 3 pages, 4 figures, submitted to Appl. Phys. Let

Gate-controlled nuclear magnetic resonance in an AlGaAs∕GaAs quantum Hall device