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We have studied the emission properties of individual InAs quantum dots (QDs)grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy.Low-temperature microphotoluminescence spectroscopy shows emission from singleQDs around 1550 nm with characteristic exciton-biexciton behavior, and abiexciton antibinding energy of more than 2 meV. Temperature-dependentmeasurements reveal negligible optical-phonon induced broadening of the excitonline up to 50 K, and emission from the exciton state clearly persists above 70K. Furthermore, we find no measurable polarized fine structure splitting of theexciton state within the experimental precision. These results are encouragingfor the development of a controllable photon source for fiber-based quantuminformation and cryptography systems.Comment: 3 pages, 4 figures, submitted AP

Optical characteristics of single InAs∕InGaAsP∕InP(100) quantum dots emitting at 1.55μm