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We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions.The tunneling magnetoresistance effect (TMR) was probed for different types ofFe/GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect isincreased and observable at room temperature. If an epitaxial Fe/GaAs(001)interface is involved, the tunnel junction exhibits a bias dependent inversionof the TMR effect. This is a first experimental signature for band structureeffects at a Fe/GaAs interface and relevant for spin injection experiments.Comment: 11 pages, 3 figures, submitted to Appl. Phys. Let

Bias dependent inversion of tunneling magnetoresistance in Fe∕GaAs∕Fe tunnel junctions