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The dominant charge state for the Ga vacancy in GaAs has been the subject ofa long debate, with experiments proposing $-$1, $-$2 or $-$3 as the bestanswer. We revisit this problem using {\it ab initio} calculations to computethe effects of temperature on the Gibbs free energy of formation, and we findthat the thermal dependence of the Fermi level and of the ionization levelslead to a reversal of the preferred charge state as the temperature increases.Calculating the concentrations of gallium vacancies based on these results, wereproduce two conflicting experimental measurements, showing that these can beunderstood from a single set of coherent LDA results when thermal effects areincluded.Comment: 4 pages, 4 figure

Thermally activated charge reversibility of gallium vacancies in GaAs