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We have performed a depth-profile analysis of an all-oxide p-n junction dioden-ZnO/p-NiO using photoemission spectroscopy combined with Ar-ion sputtering.Systematic core-level shifts were observed during the gradual removal of theZnO overlayer, and were interpreted using a simple model based on chargeconservation. Spatial profile of the potential around the interface wasdeduced, including the charge-depletion width of 2.3 nm extending on the ZnOside and the built-in potential of 0.54 eV

Potential profiling of the nanometer-scale charge-depletion layer in n-ZnO∕p-NiO junction using photoemission spectroscopy