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We describe a technique for fabricating micron and submicron-sized polydimethylsiloxane (PDMS) patterns on electronic material substrates using decal transfer lithography (DTL) in conjunction with reactive ion-beam etching (RIE). We validate the use of this unconventional polymeric system as a suitable resist material for fabricating Si-based microelectronic devices. In this process, an O2∕CF4 gas mixture was used to etch a supporting PDMS thin film that resides atop a closed-form decal polymer to reveal conventional resist structures. These structures provide an effective latent image that, in turn, provides for an extension of soft lithography as a form of multilayer lithography—one yielding submicron structures similar to those obtained from the conventional photochemical methods used to prepare such resists. This combined DTL/RIE patterning procedure was found to be compatible with commercially available planarization layers and provides a direct means for preparing high aspect ratio resist features. ...

journal of applied physics

Micron and submicron patterning of polydimethylsiloxane resists on electronic materials by decal transfer lithography and reactive ion-beam etching: Application to the fabrication of high-mobility, thin-film transistors