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We report on the anomalous Hall coefficient and longitudinal resistivityscaling relationships on a series of annealed Ga1-xMnxAs epilayers (x~0.055).As-grown samples exhibit scaling parameter n of ~ 1. Near the optimal annealingtemperature, we find n ~ 2 to be consistent with recent theories on theintrinsic origins of anomalous Hall Effect in Ga1-xMnxAs. For annealingtemperatures far above the optimum, we note n > 3, similar behavior to certaininhomogeneous systems. This observation of atypical behavior agrees well withcharacteristic features attributable to spherical resonance from metallicinclusions from optical spectroscopy measurements.Comment: 3 pages, 3 figure

Evidence of metallic clustering in annealed Ga1−xMnxAs from atypical scaling behavior of the anomalous Hall coefficient