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The formation energy of misfit dislocations in a ferroelectric thin film grown on compliant substrate is calculated based on the Landau-Devonshire formalism and Timosheko’s method for thermal stresses. The critical thickness is shown to change significantly according to the polarization in the film, leading to serious concerns, particularly for thick substrates, in the device design stage.Department of Electronic and Information EngineeringAuthor name used in this publication: C. H. Wo

Critical thickness for dislocation generation during ferroelectric transition in thin film on a compliant substrate