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The morphology and chemical composition of the surface of SiO2 that had been implanted with Zn ions of 60 keV and annealed in two different atmospheres, i.e., oxygen gas and a vacuum, were compared. In the as-implanted state, the surface mainly consisted of SiO2 with low roughness due to radiation-induced smoothing. A large number of domelike structures of ZnO appeared on the surface of the SiO2 after annealing in oxygen gas at 600 degrees C for 1 h, and the size increased with the annealing temperature up to 800 degrees C. After annealing at 900 degrees C, the surface roughness steeply decreased and the composition changed to Zn2SiO4. (c) 2006 American Institute of Physics

Atomic force microscopy and x-ray photoelectron spectroscopy studies of ZnO nanoparticles on SiO2 fabricated by ion implantation and thermal oxidation