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0.5 to 5.0 wt.% Dy2O3 was in-situ reacted with Mg + B to form pinned MgB2.While Tc remained largely unchanged, Jc was strongly enhanced. The best sample(only 0.5 wt.% Dy2O3) had a Jc of 6.5 x 10^5 A/cm^2 at 6K, 1T and 3.5 x 10^5A/cm^2 at 20K, 1T, around a factor of 4 higher compared to the pure sample, andequivalent to hot-pressed or nano-Si added MgB2 at below 1T. Even distributionsof nano-scale precipitates of DyB4 and MgO were observed within the grains. Theroom temperature resistivity decreased with Dy2O3 indicative of improved grainconnectivity.Comment: 13 pages, 4 figures and 1 tabl

Strong pinning enhancement in MgB2 using very small Dy2O3 additions