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We propose and demonstrate experimentally a novel design of single-electronquantum dots. The structure consists of a narrow band gap quantum well that canundergo a transition from the hole accumulation regime to the electroninversion regime in a single-top-gate transistor configuration. We haveobserved large size quantization and Coulomb charging energies over 10meV. Thisquantum dot design can be especially important for scalable quantum computing.Comment: 5 figure

Observation of one-electron charge in an enhancement-mode InAs single-electron transistor at 4.2K