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Multiferroic BiFeO3∕Bi3.25Sm0.75Ti2.98V0.02O12 double-layered thin films on Pt∕Ti∕SiO2∕Si were fabricated using the pulsed-laser deposition technique. The films showed greatly enhanced ferroelectric and ferromagnetic properties. The values of the remanent polarization (2Pr) and coercive field (Ec) were 71.8μC∕cm2 and 148kV∕cm at a maximum applied voltage of 13V, respectively. The value of the magnetic moment was found to be 17.5emu∕cm3. The enhancement of the polarization originated from the BiFeO3 with Bi3.25Sm0.75Ti2.98V0.02O12 working as a barrier layer. The enhancement of the magnetization is from the structural distortion of BiFeO3, due to partial epitaxial growth on the bismuth titanate surface.Multiferroic BiFeO3∕Bi3.25Sm0.75Ti2.98V0.02O12 double-layered thin films on Pt∕Ti∕SiO2∕Si were fabricated using the pulsed-laser deposition technique. The films showed greatly enhanced ferroelectric and ferromagnetic properties. The values of the remanent polarization (2Pr) and coercive field (Ec) were 71.8μC∕cm2 and 148kV∕cm at a maximum applied voltage of 13V, respectively. The value of the magnetic moment was found to be 17.5emu∕cm3. The enhancement of the polarization originated from the BiFeO3 with Bi3.25Sm0.75Ti2.98V0.02O12 working as a barrier layer. The enhancement of the magnetization is from the structural distortion of BiFeO3, due to partial epitaxial growth on the bismuth titanate surface.

Enhanced electrical polarization and ferromagnetic moment in a multiferroic BiFeO3∕Bi3.25Sm0.75Ti2.98V0.02O12 double-layered thin film