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We have investigated the contact resistance of rubrene single-crystalfield-effect transistors (FETs) with Nickel electrodes by performing scalingexperiments on devices with channel length ranging from 200 nm up to 300$\mu$m. We find that the contact resistance can be as low as 100 $\Omega$cmwith narrowly spread fluctuations. For comparison, we have also performedscaling experiments on similar Gold-contacted devices, and found that thereproducibility of FETs with Nickel electrodes is largely superior. Theseresults indicate that Nickel is a very promising electrode material for thereproducible fabrication of low resistance contacts in organic FETs

Reproducible low contact resistance in rubrene single-crystal field-effect transistors with nickel electrodes