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We implanted ultra low doses (2x10^11 cm-2) of 121Sb ions into isotopicallyenriched 28Si and find high degrees of electrical activation and low levels ofdopant diffusion after rapid thermal annealing. Pulsed Electron Spin Resonanceshows that spin echo decay is sensitive to the dopant depths, and the interfacequality. At 5.2 K, a spin decoherence time, T2, of 0.3 ms is found for profilespeaking 50 nm below a Si/SiO2 interface, increasing to 0.75 ms when the surfaceis passivated with hydrogen. These measurements provide benchmark data for thedevelopment of devices in which quantum information is encoded in donorelectron spins

Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon