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A new group-IV ferromagnetic semiconductor, Ge1-xFex, was successfully grownby low-temperature molecular beam epitaxy (LT-MBE) without precipitation offerromagnetic Ge-Fe intermetallic compounds. The ferromagnetism of Ge1-xFexfilms was investigated by magnetic circular dichroism (MCD). In particular, theinfluence of the Fe content (FFe/FGe =1 - 10%) and growth temperature (100,200OC) on the ferromagnetism was carefully studied. The MCD measurementsrevealed that the band structure of the Ge1-xFex films was identical with thatof bulk Ge, and that the large spin splitting of the band structure was inducedby the incorporation of Fe atoms into the Ge matrix, indicating the existenceof s,p-d exchange interactions. The Ge1-xFex films showed ferromagneticbehavior and the ferromagnetic transition temperature linearly increased withincreasing the Fe composition. These results indicate that the epitaxiallygrown Ge1-xFex is an intrinsic ferromagnetic semiconductor.Comment: 15 pages, 4 figures. to appear in J. Appl. Phy

Magneto-optical properties of group-IV ferromagnetic semiconductor Ge1−xFex grown by low-temperature molecular beam epitaxy