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We demonstrate tunnel magnetoresistance (TMR) junctions based on a tri layersystem consisting of an epitaxial NiMnSb, aluminum oxide and CoFe tri layer.The junctions show a tunnelling magnetoresistance of Delta R/R of 8.7% at roomtemperature which increases to 14.7% at 4.2K. The layers show clear separateswitching and a small ferromagnetic coupling. A uniaxial in plane anisotropy inthe NiMnSb layer leads to different switching characteristics depending on thedirection in which the magnetic field is applied, an effect which can be usedfor sensor applications.Comment: 8 pages, 3 figures, submitted to Appl. Phys. Let

Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy