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Magnetic properties of single-crystalline In1−xMnxSe (x=0.10) have been measured. A prominent thermal hysteresis in the magnetization is observed between 90 and 290K. The magnetization is reversible (deviating by only ∼0.8%) from 400 down to ∼120K along the upper branch of the hysteresis. In contrast, the lower branch magnetization is irreversible from 5 up to 290K and deviates by 30% of the 0.010emu∕g hysteresis splitting at 140K. Magnetic-field hysteresis loops at 200K between −7 and +7T demonstrate that changing the magnetic field does not allow movement between the upper and lower branches of the thermal hysteresis. This magnetic behavior is consistent with a charge-density wave. However, the observed ΔT=200K hysteresis in In1−xMnxSe is roughly an order of magnitude larger than other previously reported values of ΔT.

Thermal hysteresis in the magnetization of the layered III-VI diluted magnetic semiconductor In1−xMnxSe